1. Bayani na halin yanzu gaba ɗaya fasaha matsayi na silicon tushen LEDs

Haɓaka kayan GaN akan abubuwan siliki na fuskantar manyan ƙalubalen fasaha guda biyu. Da fari dai, rashin daidaituwa na lattice na har zuwa 17% tsakanin siliki substrate da GaN yana haifar da mafi girman rarrabuwar kawuna a cikin kayan GaN, wanda ke shafar ingancin haske; Abu na biyu, akwai rashin daidaituwa na thermal har zuwa 54% tsakanin siliki substrate da GaN, wanda ke sa fina-finan GaN su kasance masu saurin fashewa bayan haɓakar zafin jiki da faɗuwa zuwa zafin jiki, yana shafar yawan samarwa. Sabili da haka, haɓakar buffer Layer tsakanin siliki na siliki da fim ɗin bakin ciki na GaN yana da mahimmanci. Layin buffer yana taka rawa wajen rage rarrabuwar kawuna a cikin GaN da rage tsagewar GaN. Har ila yau, matakin fasaha na buffer Layer yana ƙayyade ƙimar ƙididdiga na ciki da samar da LED, wanda shine mayar da hankali da wahala na tushen silicon.LED. Ya zuwa yanzu, tare da saka hannun jari mai yawa a cikin bincike da haɓaka daga masana'antu da masana'antu, wannan ƙalubalen fasaha an shawo kan su.

Substrate silicon yana ɗaukar haske mai gani sosai, don haka fim ɗin GaN dole ne a canza shi zuwa wani yanki. Kafin canja wuri, ana shigar da babban abin haskakawa tsakanin fim ɗin GaN da sauran kayan aikin don hana hasken da GaN ke fitarwa daga substrate ɗin. The LED tsarin bayan substrate canja wurin da aka sani a cikin masana'antu a matsayin Thin Film guntu. Chingunan fina-finai na bakin ciki suna da fa'ida akan guntuwar tsarin gargajiya na al'ada dangane da yaduwa na yanzu, yanayin zafi, da daidaiton tabo.

2. Overview na halin yanzu overall aikace-aikace matsayi da kasuwa bayyani na silicon substrate LEDs

LEDs tushen Silicon suna da tsari na tsaye, rarrabawar yanzu iri ɗaya, da saurin yaduwa, yana sa su dace da aikace-aikacen manyan ƙarfi. Saboda fitowar haske mai gefe guda, kyakkyawan shugabanci, da ingancin haske mai kyau, ya dace musamman don hasken wayar hannu kamar hasken mota, fitilun bincike, fitilun ma'adinai, fitilun wayar hannu, da filayen haske masu tsayi tare da buƙatun ingancin haske. .

Fasaha da tsari na Jingneng Optoelectronics silicon substrate LED sun zama balagagge. Dangane da ci gaba da ci gaba da haɓaka fa'idodin fa'ida a fagen silicon substrate blue haske LED kwakwalwan kwamfuta, samfuranmu suna ci gaba da haɓaka zuwa filayen hasken wuta waɗanda ke buƙatar hasken jagora da fitarwa mai inganci, irin su kwakwalwan kwamfuta na haske mai haske na LED tare da mafi girman aiki da ƙarin ƙimar. , LED wayar filasha filasha, LED mota fitilolin mota, LED titi fitilu, LED backlight, da dai sauransu, a hankali kafa m matsayi na silicon substrate LED kwakwalwan kwamfuta a cikin segmented masana'antu.

3. Ci gaban Trend Hasashen na silicon substrate LED

Haɓaka ingancin haske, rage farashi ko ingantaccen farashi shine jigo na har abada a cikinLED masana'antu. Silicon substrate bakin ciki film kwakwalwan kwamfuta dole ne a kunshe da kafin su iya amfani, da kuma kudin marufi asusun ga wani babban ɓangare na LED aikace-aikace kudin. Tsallake marufi na gargajiya kuma haɗa abubuwan haɗin kai kai tsaye akan wafer. A wasu kalmomi, marufi sikelin guntu (CSP) akan wafer na iya tsallake ƙarshen marufi kuma kai tsaye shigar da ƙarshen aikace-aikacen daga ƙarshen guntu, yana ƙara rage farashin aikace-aikacen LED. CSP yana ɗaya daga cikin abubuwan da ake fatan GaN na tushen LEDs akan silicon. Kamfanonin kasa da kasa irin su Toshiba da Samsung sun bayar da rahoton yin amfani da ledojin da aka yi amfani da su na silicon don CSP, kuma an yi imanin cewa nan ba da jimawa ba za a samu kayayyakin da ke da alaka da su a kasuwa.

A cikin 'yan shekarun nan, wani wuri mai zafi a cikin masana'antar LED shine Micro LED, wanda kuma aka sani da matakin LED na micrometer. Girman Micro LEDs ya fito daga ƴan micrometers zuwa dubun micrometers, kusan a kan matakin ɗaya da kauri na GaN bakin ciki fina-finai da aka girma ta epitaxy. A ma'aunin micrometer, kayan GaN za a iya yin su kai tsaye zuwa gaNLED da aka tsara a tsaye ba tare da buƙatar tallafi ba. Wato, yayin da ake shirya Micro LEDs, dole ne a cire substrate don girma GaN. Amfanin dabi'a na LEDs na tushen silicon shine cewa ana iya cire madaidaicin siliki ta hanyar sinadarai rigar etching kadai, ba tare da wani tasiri akan kayan GaN yayin aiwatar da cirewa ba, yana tabbatar da yawan amfanin ƙasa da dogaro. Daga wannan hangen nesa, fasahar LED na silicon substrate tana daure ta sami wuri a fagen Micro LEDs.